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2018.11.15 - SSDI Releases Hermetic, High Voltage GaN Power FETs

High Voltage GaN FETs

SSDI is proud to introduce its hermetic, high voltage Gallium Nitride (GaN) Power FETs for aerospace and defense applications. The SGF46E70 family of 46 A, 700 V GaN FETs, features a low RDS(ON) MAX of 41 mΩ (@ 30 A) and low QG MAX of 36 nC (@ 32 A). The SGF46E70 is available in a through hole package option, TO-254, and a surface mount option, SMD1. The SGF15E100 is a 15 A, 1000 V GaN FET in the TO-257 package. This device also offers a low RDS(ON) MAX of 205 mΩ (@ 10 A) and low QG TYP of 10 nC (@ 10 A). Both of these families are cascode devices combining a GaN HEMT and a low voltage silicon MOSFET driver for superior performance.


GaN products have garnered much attention for their improved figure of merit (RDS(ON) x QG), which leads to faster switching speeds compared to traditional silicon MOSFETs. With lower conduction losses and cross-over losses than silicon MOSFETs, circuit designers can achieve higher efficiency by switching to GaN products. SSDI’s high voltage GaN Power FETs can be used for a wide range of applications including high efficiency DC-DC / PoL converters, motor controllers, and robotics / automation.


While low voltage, non-hermetic GaN devices are widely available for commercial applications, SSDI specializes in hermetic solutions for high power / high voltage aerospace and defense applications. With 50+ years of heritage in high reliability products, SSDI’s engineering and manufacturing teams offer hermetic, high efficiency GaN solutions that can be tailored for specific mission requirements. Contact SSDI online or at (562) 404-4474 to request samples or to discuss specific program requirements.


GaN Technology Advantages Over Traditional Si Transistors

  • Wider bandwidth
  • Extremely low reverse recovery charge (QRR)
  • Low gate charge (QG)
  • Low drain to source on state resistance (RDS(ON))
  • Low temperature coefficient

Benefits for Circuit Designer

  • Higher efficiency
  • Fast switching speed
  • Low cross-over losses
  • Lower on state losses
  • Eliminates need to add free-wheeling diode

Visit the GaN Power FETs product category (PRODUCTS > Gallium Nitride (GaN) Power FETs) to view data sheets and additional GaN products


SSDI's Hermetic GaN Power FETs Catalog is also available for download at SUPPORT > Literature
Hermetic GaN Power FETs for Aerospace & Defense