News
Over the past 50 years, SSDI has perfected its proprietary die stacking technology to manufacture small profile, high voltage products such as the JANS1N6512 – JANS1N6519 series. SSDI is the only supplier of these JANS certified high voltage rectifiers. These 0.5 – 1.5 A axial leaded diodes deliver high reverse voltages up to 10 kV. With a maximum reverse recovery time of 70 nsec, these devices offer high switching efficiency and low switching losses. With these features, the 1N6519 series is ideal for high efficiency, high voltage applications like TWT radar systems and electronic warfare. JANS screening per MIL-PRF-19500/575 is available for the axial leaded versions. Equivalent TX, TXV, and S level screening based on MIL-PRF-19500 is also available for axial leaded and surface mount square tab versions.
Features
- Ultrafast Reverse Recovery: 70 nsec Maximum
- High Switching Efficiency; Lower Switching Losses
- PIV to 10 kV
- Hermetically Sealed Axial Package
- Void Free Ceramic Frit Glass Construction
- High Temperature Category I Eutectic Metallurgical Bond
- Excellent Thermal Shock Performance
- For Use in High Voltage Systems including TWT Radar Applications
- 175°C Maximum Operating Temperature
- JANS screening available in accordance with MIL-PRF-19500/575
| JANS1N6512 - JANS1N6519 Maximum Ratings / Electrical Characteristics |
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| Part Number | VRWM (kV) | IFSM (A) | IO (A) | tRR (ns) | IR (µA) | VF (V) | C (pF) |
| JANS1N6512 | 1.5 | 100 | 1.5 | 70 | 1.0 | 3.5 | 25 |
| JANS1N6513 | 2 | 100 | 1.5 | 70 | 1.0 | 3.5 | 25 |
| JANS1N6514 | 2.5 | 60 | 1.0 | 70 | 1.0 | 6.0 | 20 |
| JANS1N6515 | 3 | 60 | 1.0 | 70 | 1.0 | 6.0 | 20 |
| JANS1N6516 | 4 | 40 | 0.75 | 70 | 1.0 | 8.0 | 16 |
| JANS1N6517 | 5 | 40 | 0.75 | 70 | 1.0 | 8.0 | 16 |
| JANS1N6518 | 7.5 | 25 | 0.5 | 70 | 1.0 | 13.0 | 8 |
| JANS1N6519 | 10 | 25 | 0.5 | 70 | 1.0 | 13.0 | 8 |
SSDI’s die stacking technology leads to enhanced reliability of its discrete components. The process begins with multiple finished wafers that are stacked together with the die geometry properly aligned. These wafers are metallurgically bonded at over 800°C before singulation using a precise diamond saw. Refractory metal contacts and silver pins are then metallurgically bonded to the die stack at over 700°C before being hermetically sealed with ceramic frit glass. This high temperature processing results in an extremely rugged, Category I metallurgical bond, ideal for critical aerospace and defense applications. In addition to high voltage rectifier diodes, die stacking technology also delivers very low capacitance TVS devices, higher voltage and enhanced power handling Zeners / TVS, bipolar Zeners / TVS, Stabistors, and redundant diodes.
For more information, samples, or to discuss specific program requirements, contact SSDI at (562) 404-4474 or [email protected].
