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2019.01.10 - SSDI Releases Hermetic 1200 V SiC Power FETs

1200 V SiC Power FETs

La Mirada, CA - SSDI has released its new 1200 volt SFC35N120 SiC power MOSFETs. These enhancement mode N-channel MOSFETs deliver a maximum continuous drain current of 26 – 30 amps and low RDS(ON) of 96 mΩ max (@ 20 A, 25°C). The SFC35N120’s low gate charge of 65 nC max also leads to its improved figure of merit over traditional silicon MOSFETs.

SiC MOSFETs can increase efficiency in switching applications when replacing silicon MOSFETs. The SFC35N120 has a fast switching speed of less than 30 ns (typical). With an on-resistance of only 190 mΩ max at 150°C, this device also displays excellent high temperature performance, which allows for smaller devices, facilitates parallel configurations, and reduces thermal management hardware such as fans and/or heatsinks.

Since silicon carbide has a higher critical breakdown field compared to silicon, SiC MOSFETs can achieve the same voltage rating in a smaller package than silicon MOSFETs. The SFC35N120 is available in the TO-257 through hole package and two surface mount options, the SMD.5 and Cerpack. These hermetic products are intended for high reliability aerospace and defense applications such as high voltage DC-DC converters and PFC boost converters. Contact SSDI online or at (562) 404-4474 to request samples or to discuss specific program requirements.


  • Fast switching, low capacitance
  • High blocking voltage, low RDS(ON)
  • Easy to parallel, simple to drive
  • Resistant to latch-up
  • Hermetically sealed power packaging
  • TX, TXV, and S-level screening available


  • High voltage DC-DC converters
  • PFC boost converters
  • Aerospace, high reliability, military

View the SFC35N120 Data Sheet for additional information

Visit the MOSFETs product category to view additional silicon MOSFET products and data sheets