562.404.4474 JANS Certified / ISO 9001 and AS9100 Certified


2019.03.26 - SSDI Offers Industry's Smallest High Voltage GaN Power FETs

SGF43E70-28, High Voltage GaN FETs

SSDI has expanded its line of hermetic, high voltage GaN Power FETs with the SGF43E70-28. This 43 A, 700 V device is available in the LCC28 surface mount package, which has the smallest footprint (0.458" x 0.458" max) and lowest profile (0.095" max) for hermetic, high voltage GaN FETs. The LCC28 package has an internal CuW heat sink which can be soldered to an external heat sink for better thermal management.

The SGF43E70-28 features a low RDS(ON) TYP of 39 mΩ (@ 30 A) and low QG TYP of 24 nC (@ 32 A). With its low figure of merit (RDS(ON) x QG), low conduction losses, and low cross-over losses, these devices can achieve faster switching and higher efficiency in a smaller package when compared to traditional silicon MOSFETs. SSDI’s high voltage GaN products from 700 – 1000 volts are cascode devices combining a GaN HEMT and a low voltage silicon MOSFET driver for superior performance. SSDI’s high voltage GaN Power FETs can be used for a wide range of applications including high efficiency DC-DC / PoL converters and motor controllers.

While low voltage, non-hermetic GaN devices are widely available for commercial applications, SSDI specializes in high density, hermetic solutions for high power / high voltage aerospace and defense applications. With 50+ years of heritage in high reliability products, SSDI’s engineering and manufacturing teams offer hermetic, high efficiency GaN solutions that can be tailored for specific mission requirements. Contact SSDI online or at (562) 404-4474 to request samples or to discuss specific program requirements.

GaN Technology Advantages Over Traditional Si Transistors

  • Wider bandwidth
  • Extremely low reverse recovery charge (QRR)
  • Low gate charge (QG)
  • Low drain to source on state resistance (RDS(ON))
  • Low temperature coefficient

Benefits for Circuit Designer

  • Higher efficiency
  • Fast switching speed
  • Low cross-over losses
  • Lower on state losses
  • Eliminates need to add free-wheeling diode

Visit the GaN Power FETs product category (PRODUCTS > Gallium Nitride (GaN) Power FETs) to view data sheets and additional GaN products

SSDI's Hermetic GaN Power FETs Catalog is also available for download at SUPPORT > Literature
Hermetic GaN Power FETs for Aerospace & Defense