562.404.4474 JANS Certified / ISO 9001 and AS9100 Certified

News

2019.10.31 - SSDI Releases New 12 A, 500 - 600 V SiC Schottkys

SSR12C60S.22, 12 A, 600 V SiC Schottky

SSDI continues to develop new, high density products with the release of the SSR12C50S.22 and SSR12C60S.22 SiC Schottky rectifiers. These high power, high voltage devices deliver 12 A and 500 - 600 volts in the hermetically sealed SMD.22 package. This small footprint, low profile package (0.157" W x 0.227" L x 0.075" H max) offers a volume reduction of approximately 4 times the TO-252 package (0.265" W x 0.397" L x 0.094" H max), which is commonly used for commercial applications.


The SSR12C60S.22 offers fast switching with negligible reverse and forward recovery time. SiC Schottkys deliver excellent high temperature performance as there is no change in switching time over temperature. The high efficiency performance of the SSR12C60S.22 is also evident by its very low reverse leakage current (3 µA typical at 25°C, 6 µA typical at 125°C) and low forward voltage (1.54 V typical @ 12 A, 25°C). SiC Schottkys do not require matching because of their negligible reverse recovery time and positive temperature coefficient. Therefore, two of these small devices can easily be paralleled to deliver 24 amps of output current.

2 SMD.22 devices in parallel
Figure 1. Suggested PCB pad layout for 2 devices in parallel
- output current of 24 amps

 

SSDI was an early proponent of hermetic SiC Schottkys and currently offers devices up to 1700 volts and 100 amps. SSDI continues to supply SiC Schottkys to the aerospace and defense industries including various satellite programs. Likewise, the SSR12C60S.22 can provide excellent switching performance for many high reliability applications such as high voltage power supplies, switches, and power controls. SSDI also offers a wide range of hermetic packaging options and in-house capabilities for TX, TXV, and S level screening. Contact SSDI online or at (562) 404-4474 to request samples or to discuss specific program requirements.


Features

  • 500 - 600 V Silicon Carbide Schottky Rectifier
  • Switching Behavior Benchmark
  • No Reverse Recovery
  • No Forward Recovery
  • No Switching Time Change Over Temperature
  • Low Forward Voltage Drop
  • Hermetically Sealed Surface Mount Package
  • Small Footprint
  • TX, TXV, and Space Level Screening Available

Visit the SiC Schottkys product category (PRODUCTS > Schottkys > SiC Schottky) to view data sheets and additional SiC Schottky products


SSDI's Hermetic SiC Schottkys & MOSFETs Catalog is also available for download at SUPPORT > Literature
Hermetic SiC Schottkys & MOSFETs for Aerospace & Defense