• 3rd Generation Gallium Nitride Technology • Combines GaN HEMT and Low Voltage Si MOSFET (Cascode) for Superior Performance • Works with Common Gate Drivers • Low RDSon • Low Qg Simplifies Gate Drive Circuit • Very Fast Switching for High Frequency Applications • Low Thermal Resistance • Hermetically Sealed Package • TX, TXV, and S-Level Screening Available • Available as Normally-On (without the Si Mosfet Driver)
APPLICATIONS: • High Efficiency DC-DC / PoL Converters • Motor Controller • Robotics/Automation • Military and Aerospace
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