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TO-257

New

SGF15E100J

15 A, 1000 V, 160 mΩ typical GaN FET Normally-Off

Features

• 3rd Generation Gallium Nitride Technology
• Combines GaN HEMT and Low Voltage Si MOSFET (Cascode) for Superior Performance
• Works with Common Gate Drivers
• Low RDSon
• Low Qg Simplifies Gate Drive Circuit
• Very Fast Switching for High Frequency Applications
• Low Thermal Resistance
• Hermetically Sealed Package
• TX, TXV, and S-Level Screening Available
• Available as Normally-On (without the Si Mosfet Driver)

APPLICATIONS:
• High Efficiency DC-DC / PoL Converters
• Motor Controller
• Robotics/Automation
• Military and Aerospace

Parameters

Vdss [V] 1000
Id [A] 15
Rds(on) typ [mΩ] $160.00
Rds(on) max [mΩ] $190.00
Pd [W] 62
Total Dose [kRad] N/A
Bv dss [V] $1,000.00
Package TO-257