SGF30E100Z8
30 A, 1000 V, 160 mΩ typical Dual GaN FET Normally-Off
SKU
SGF30E100Z8
Parameters
Vdss [V] | 1000 |
---|---|
Id [A] | 30 |
Rds(on) typ [mΩ] | 160.00 |
Rds(on) max [mΩ] | 190.00 |
Pd [W] | 62 |
Bv dss [V] | 1,000.00 |
Package | TO-254Z (8 Pin) |
Data Sheet | FT0087A.PDF |
Features
• Two Devices in One Compact Hermetically Sealed Package
• Connect in Parallel to Achieve 30 A
• Can Be Used Individually or in Half Bridge Configuration (15 A)
• 3rd Generation Gallium Nitride Technology
• Combines GaN HEMT and Low Voltage Si MOSFET (Cascode) for Superior Performance
• Works with Common Gate Drivers
• Low RDS(ON)
• Low QG Simplifies Gate Drive Circuit
• Very Fast Switching for High Frequency Applications
• Low Thermal Resistance
• TX, TXV, and S-Level Screening Available
• Available as Normally-On (without the Si FET Driver)
APPLICATIONS:
• High Efficiency DC-DC / PoL Converters
• Motor Controller
• Robotics/Automation
• Military and Aerospace