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SMG.3-1

New

SGF48N10

48 A, 100 V, 6 mΩ GaN Power FET Enhancement Mode

Features

• 4th Generation Gallium Nitride Technology
• Exceptionally Low RDSon
• Low Qg Simplifies Gate Drive Circuit
• Very Fast Switching for High-Freq. Applications
• Low Thermal Resistance
• Hermetically Sealed, Chip-Scale Package (SMG.3-1)
• TX, TXV, and S-Level Screening Available

APPLICATIONS:
• High Efficiency DC-DC/PoL Converters
• Motor Controller
• Robotics/Automation
• Military and Aerospace

Parameters

Vdss [V] 100
Id [A] 48
Rds(on) typ [mΩ] $5.50
Rds(on) max [mΩ] $6.00
Pd [W] 25
Total Dose [kRad] N/A
Bv dss [V] $100.00
Package SMG.3-1