Features
• 600 V IGBT Technology
• Positive Temperature Coefficient for Ease of Paralleling
• High Current Switching for Motor Drives and Inverters
• Low Saturation Voltage at High Currents
• Low Switching Losses
• High Short Circuit Capability
• MOS Input, Voltage Controlled
• Ultra Fast Free Wheeling Diodes
• Hermetic Sealed Construction
• TX, TXV, and S-Level Screening Available
• Positive Temperature Coefficient for Ease of Paralleling
• High Current Switching for Motor Drives and Inverters
• Low Saturation Voltage at High Currents
• Low Switching Losses
• High Short Circuit Capability
• MOS Input, Voltage Controlled
• Ultra Fast Free Wheeling Diodes
• Hermetic Sealed Construction
• TX, TXV, and S-Level Screening Available
Parameters
| Vceo [V] | 600 |
|---|---|
| Ic [A] | 42 |
| Vce (sat) typ [V] | $2.00 |
| Vce (sat) max [V] | $2.50 |
| Pd [W] | 200 |
| t(off) typ [nsec] | $860.00 |
| t(off) max [nsec] | N/A |
| Package | TO-259 |
