The store will not work correctly in the case when cookies are disabled.
SFF116N10J
116 A, 100 V, 15 mΩ Avalanche Rated N-Channel MOSFET
Parameters
More Information
| Vdss [V] |
100 |
| Id [A] |
116 |
| Rds(on) typ [mΩ] |
10.00 |
| Rds(on) max [mΩ] |
15.00 |
| Pd [W] |
150 |
| Bv dss [V] |
100.00 |
| Package |
TO-257 |
| Data Sheet |
FT0090A.PDF |
| Polarity |
N-Channel |
Features
• Rugged Poly-Si Gate
• Lowest ON-Resistance in the Industry
• Avalanche Rated
• Hermetically Sealed, Isolated Package
• Low Total Gate Charge
• Fast Switching
• TX, TXV, S-Level Screening Available
• Improved (RDS(on) QG) Figure of Merit
| 
