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SFF116N10M
116 A, 100 V, 8 mΩ Avalanche Rated N-Channel MOSFET
Parameters
More Information
| Vdss [V] |
100 |
| Id [A] |
116 |
| Rds(on) typ [mΩ] |
5.00 |
| Rds(on) max [mΩ] |
8.00 |
| Pd [W] |
150 |
| Bv dss [V] |
100.00 |
| Package |
TO-254 |
| Data Sheet |
FT0037C.PDF |
| Polarity |
N-Channel |
Features
• Rugged Poly-Si Gate
• Lowest ON-Resistance in the Industry
• Avalanche Rated
• Hermetically Sealed, Isolated Package
• Low Total Gate Charge
• Fast Switching
• TX, TXV, S-Level Screening Available
• Improved (RDS(on) QG) Figure of Merit
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