Parameters
| Vdss [V] | 100 |
|---|---|
| Id [A] | 8 |
| Rds(on) typ [mΩ] | 140.00 |
| Rds(on) max [mΩ] | 210.00 |
| Pd [W] | 25 |
| Bv dss [V] | 100.00 |
| Package | TO-5 |
| Data Sheet | F00019D.PDF |
| Polarity | N-Channel |
Features
• Rugged Construction with Poly-Si Gate
• Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Hermetically Sealed Package
• Available in both Hot Case and Isolated Versions
• Ideal for Low Power Applications
• TX, TXV, and Space Level Screening Available
• Replacement for IRFF130 Types
• Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Hermetically Sealed Package
• Available in both Hot Case and Isolated Versions
• Ideal for Low Power Applications
• TX, TXV, and Space Level Screening Available
• Replacement for IRFF130 Types
