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SFF25P20S2I-03
-25 A, -200 V, 150 mΩ Typical P-Channel MOSFET
Parameters
More Information
Vdss [V] |
200 |
Id [A] |
25 |
Rds(on) typ [mΩ] |
150.00 |
Pd [W] |
250 |
Bv dss [V] |
200.00 |
Package |
SMD2 Isolated |
Data Sheet |
FT0009B.PDF |
Polarity |
P-Channel |
Features
• Poly-Si Gate Cell Structure
• Low ON-Resistance
• UIS (Unclamped Inductive Switching) Rated
• Hermetically Sealed, Isolated Package
• Low Package Inductance
• Stress Relief Provided by Flexible Leads - Several Options Available
• Improved (RDS(on) QG) Figure of Merit
• TX, TXV, S-Level Screening Available