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SFF65P20S2
-65 A, -200 V, 85 mΩ Avalanche Rated, Enhancement Mode P-Channel MOSFET
Parameters
More Information
Vdss [V] |
200 |
Id [A] |
65 |
Rds(on) typ [mΩ] |
80.00 |
Rds(on) max [mΩ] |
85.00 |
Pd [W] |
360 |
Bv dss [V] |
200.00 |
Package |
SMD2 |
Data Sheet |
FT0100A.PDF |
Polarity |
P-Channel |
Features
• PolarMOS Technology
• Lowest ON-Resistance in the Industry
• Avalanche Rated
• Hermetically Sealed, Isolated Package
• Low Total Gate Charge
• Fast Switching
• TX, TXV, S-Level Screening Available
• Improved (Rds(on) QG) Figure of Merit