Parameters
Vdss [V] | 60 |
---|---|
Id [A] | 35 |
Rds(on) typ [mΩ] | 28.00 |
Rds(on) max [mΩ] | 35.00 |
Pd [W] | 63 |
Bv dss [V] | 60.00 |
Package | TO-257 |
Data Sheet | F00031A.PDF |
Polarity | N-Channel |
Features
• Rugged Construction with Poly-Si Gate Cell
• Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Ceramic Seals for Improved Hermeticity
• Hermetically Sealed Package
• TX, TXV, and Space Level Screening Available
• Replaces: IRFY044 Types
• Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Ceramic Seals for Improved Hermeticity
• Hermetically Sealed Package
• TX, TXV, and Space Level Screening Available
• Replaces: IRFY044 Types