Parameters
Vdss [V] | 200 |
---|---|
Id [A] | 9 |
Rds(on) typ [mΩ] | 250.00 |
Rds(on) max [mΩ] | 400.00 |
Pd [W] | 25 |
Bv dss [V] | 200.00 |
Package | TO-5 |
Data Sheet | F00011C.PDF |
Polarity | N-Channel |
Features
• Rugged Construction with Poly-Si Gate
• Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Available in both hot case and isolated versions
• Ideal for low power applications
• Hermetically Sealed Package
• TX, TXV, and Space Level Screening Available
• Replaces: IRF230 Types
• Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Available in both hot case and isolated versions
• Ideal for low power applications
• Hermetically Sealed Package
• TX, TXV, and Space Level Screening Available
• Replaces: IRF230 Types