Parameters
Vdss [V] | 200 |
---|---|
Id [A] | 30 |
Rds(on) typ [mΩ] | 60.00 |
Rds(on) max [mΩ] | 85.00 |
Pd [W] | 125 |
Bv dss [V] | 200.00 |
Package | TO-254Z |
Data Sheet | F00049E.PDF |
Polarity | N-Channel |
Features
• Rugged Construction with Polysilicon Gate Cell
• Low RDS(ON) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dV/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Ceramic Seals Available for Improved Hermeticity
• Hermetically Sealed Surface Mount Power Package
• TX, TXV, and Space Level Screening Available
• Replacement for IRFM250 Types
• Low RDS(ON) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dV/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Ceramic Seals Available for Improved Hermeticity
• Hermetically Sealed Surface Mount Power Package
• TX, TXV, and Space Level Screening Available
• Replacement for IRFM250 Types