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SFF35N20M
55 A, 200 V, 35 mΩ N-Channel Trench Gate MOSFET
Parameters
More Information
| Vdss [V] |
200 |
| Id [A] |
55 |
| Rds(on) typ [mΩ] |
26.00 |
| Rds(on) max [mΩ] |
35.00 |
| Pd [W] |
210 |
| Bv dss [V] |
200.00 |
| Package |
TO-254 |
| Data Sheet |
FT0018A.PDF |
| Polarity |
N-Channel |
Features
• Trench Gate Technology
• Lowest ON-Resistance in the Industry
• UIS Rated
• Hermetically Sealed, Isolated Power Package
• Low Total Gate Charge
• Fast Switching
• TX, TXV, S-Level Screening Available
• Improved (RDS(on) QG) Figure of Merit
• Enhanced Replacement for IRHM250 types
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