SFF40N60N
40 A, 600 V, 40 mΩ typ N-Channel Power MOSFET
SKU
SFF40N60N
Parameters
| Vdss [V] | 600 |
|---|---|
| Id [A] | 40 |
| Rds(on) typ [mΩ] | 40.00 |
| Rds(on) max [mΩ] | 50.00 |
| Pd [W] | 150 |
| Bv dss [V] | 600.00 |
| Package | TO-258 |
| Data Sheet | FT0059A.PDF |
| Polarity | N-Channel |
Features
• Rugged Construction with Poly-Si Gate
• Very Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Hermetically Sealed, Isolated Surface Mount Power Package
• Ceramic Seals for Improved Hermeticity
• TX, TXV, S-Level Screening Available
• Very Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Hermetically Sealed, Isolated Surface Mount Power Package
• Ceramic Seals for Improved Hermeticity
• TX, TXV, S-Level Screening Available
