Features
• Rugged Construction with Poly-Si Gate
• Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Hermetically Sealed
• TX, TXV, and S-Level Screening Available
• Replacement for IRF9140 Types
• Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Hermetically Sealed
• TX, TXV, and S-Level Screening Available
• Replacement for IRF9140 Types
Parameters
| Vdss [V] | -200 |
|---|---|
| Id [A] | -11 |
| Rds(on) typ [mΩ] | $350.00 |
| Rds(on) max [mΩ] | $500.00 |
| Pd [W] | 63 |
| Total Dose [kRad] | N/A |
| Bv dss [V] | -$200.00 |
| Package | TO-257 |
