• Replaces DO-4 and DO-5 (1N5816, 1N6306) • High Current Version of 1N5811 • Hyperfast Recovery • PIV to 200 Volts • Low Reverse Leakage Current • Hermetically Sealed Void-Free Construction • Monolithic Single Chip Construction • High Surge Rating • Low Thermal Resistance • Available in Surface Mount Versions (-US Suffix) • TX, TXV, and S-Level Screening Available
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