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TO-5

SFS2326

1.6 A, 200 V Silicon Controlled Rectifier

Features

• Low-Level Gate Characteristics
• IGT = 200 μA (Max) @ 25°C
• Low Holding Current IH = 1 mA (Max) @ 25°C
• Anode Common to Case
• Hermetically Sealed

Parameters

Vdrm [V] 200
Io [A] 1.6
Igt typ [mA] $0.00
Igt max [mA] $0.20
Vgt typ [V] $0.51
Vgt max [V] $0.70
Ih typ [mA] $1.00
Ih max [mA] $2.00
tq typ [µs] N/A
tq max [µs] N/A
Package TO-5