SFT2012/3

200 A,120 V High Energy NPN Transistor
SKU
SFT2012/3
More Information
Vceo [V] 120
Ic [A] 200.00
Hfe min 5
Pd [W] 600.00
t(off) max [nsec] 1900
fT min [MHz] 30.00
Package TO-3
Data Sheet TR0108A.PDF
Polarity NPN
• BVCBO = 250 V MIN
• 600 Watts Power Dissipation
• Excellent SOA Curve
• Es/b of 800 mJ
• Gain of over 5 at 200 A
• High Reliability Construction
• Planar Chip Construction with Low Leakage and Very Fast Switching
• TX, TXV, S-Level Screening Available

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