Parameters
Vdss [V] | 100 |
---|---|
Id [A] | 23 |
Rds(on) typ [mΩ] | 135.00 |
Rds(on) max [mΩ] | 180.00 |
Pd [W] | 125 |
Bv dss [V] | 100.00 |
Package | Cerpack |
Data Sheet | FT0102B.PDF |
Polarity | P-Channel |
Features
• Rugged Construction with Poly Silicon Gate
• Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Hermetically Sealed
• TX, TXV, and Space Level Screening Available
• Improved replacement of IRF9140 Types