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SFS07100

SFS07100

7 A, 100 V Silicon Controlled Rectifier

Features

• Low-Level Gate Characteristics
• IGT = 20 µA (typical) @ 25°C
• Low Holding Current IH = 1.25 mA (typ) @ 25°C
• Anode Common to Case
• Hermetically Sealed

Parameters

Vdrm [V] 100
Io [A] 7
Igt typ [mA] $0.02
Igt max [mA] $0.20
Vgt typ [V] $0.51
Vgt max [V] $0.80
Ih typ [mA] $1.25
Ih max [mA] $10.00
tq typ [µs] N/A
tq max [µs] N/A
Package TO-5